Magnetic materials with enhanced perpendicular anisotropy energy density for STT-RAM
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United States of America Patent
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Jun 16, 2015
Grant Date -
Dec 11, 2014
app pub date -
Jun 6, 2013
filing date -
Jun 6, 2013
priority date (Note) -
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Abstract
A mechanism is provided for a spin torque transfer random access memory device. A reference layer is disposed on a seed layer. A tunnel barrier is disposed on the reference layer. A free layer is disposed on the tunnel barrier. A cap layer is disposed on the free layer. The free layer includes a magnetic layer and a metal oxide layer, in which the magnetic layer is disposed on the tunnel barrier and the metal oxide layer is disposed on the magnetic layer. A metal material used in the metal oxide layer includes at least one of Ti, Ta, Ru, Hf, Al, La, and any combination thereof.
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