Multilevel phase change memory operation

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United States of America Patent

PATENT NO 9064572
APP PUB NO 20130215668A1
SERIAL NO

13847205

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Abstract

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Methods, devices, and systems associated with multilevel phase change memory cells are described herein. One or more embodiments of the present disclosure include operating a phase change memory device by placing a phase change memory cell in a reset state and applying a selected programming pulse to the phase change memory cell in order to program the cell to one of a number of intermediate states between the reset state and a set state associated with the cell. The selected programming pulse includes an uppermost magnitude applied for a particular duration, the particular duration depending on to which one of the number of intermediate states the memory cell is to be programmed.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Wenzhou San Jose, US 14 180
Liu, Jun Boise, US 1407 16613

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