Method of manufacturing semiconductor device and semiconductor device having oxide film crystallized by a thermal treatment

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United States of America Patent

PATENT NO 9064802
APP PUB NO 20080303119A1
SERIAL NO

12113350

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Abstract

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A method of manufacturing a semiconductor device includes forming a metal oxide on a semiconductor substrate, forming a gate electrode film on the metal oxide, and executing a thermal treatment on the semiconductor substrate provided with the metal oxide and the gate electrode film to crystallize the metal oxide.

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Patent Owner(s)

  • SEIKO EPSON CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Watanabe, Yukimune Chino, JP 18 98

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