Method for qualifying a semiconductor wafer for subsequent processing
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United States of America Patent
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Jun 23, 2015
Grant Date -
Sep 18, 2014
app pub date -
May 8, 2013
filing date -
Mar 13, 2013
priority date (Note) -
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Abstract
A method is provided for qualifying a semiconductor wafer for subsequent processing, such as thermal processing. A plurality of locations are defined about a periphery of the semiconductor wafer, and one or more properties, such as oxygen concentration and a density of bulk micro defects present, are measured at each of the plurality of locations. A statistical profile associated with the periphery of the semiconductor wafer is determined based on the one or more properties measured at the plurality of locations. The semiconductor wafer is subsequently thermally treated when the statistical profile falls within a predetermined range. The semiconductor wafer is rejected from subsequent processing when the statistical profile deviates from the predetermined range. As such, wafers prone to distortion, warpage, and breakage are rejected from subsequent thermal processing.
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