A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.
6911381 Boron incorporated diffusion barrier material
6943416 Method and structure for reducing resistance of a semiconductor device feature
2005/0110,058 Method and structure for reducing resistance of a semiconductor device feature
* 2006/0197,225 Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines
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