Power semiconductor device
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United States of America Patent
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Jun 23, 2015
Grant Date -
Jan 31, 2013
app pub date -
Sep 24, 2012
filing date -
Mar 23, 2010
priority date (Note) -
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Abstract
A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source region embedded into the first base layer which contacts the emitter electrode and has a higher doping concentration than the drift layer, a first gate electrode in a same plane and lateral to the first base layer, a second base layer in the same plane and lateral to the first base layer, a second gate electrode on top of the emitter side, and a second source region electrically insulated from the second base layer, the second source region and the drift layer by a second insulating layer.
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