Memory including blocking dielectric in etch stop tier

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United States of America Patent

PATENT NO 9064970
SERIAL NO

13864794

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Abstract

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Vertical memories and methods of making the same are discussed generally herein. In one embodiment, a vertical memory can include a vertical pillar extending to a source, an etch stop tier over the source, and a stack of alternating dielectric tiers and conductive tiers over the etch stop tier. The etch stop tier can comprise a blocking dielectric adjacent to the pillar. In another embodiment, the etch stop tier can comprise a blocking dielectric adjacent to the pillar, and a plurality of dielectric films horizontally extending from the blocking dielectric into the etch stop tier.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hopkins, John Boise, US 77 978
Jayanti, Srikant Boise, US 17 319
Simsek-Ege, Fatma Arzum Boise, US 136 1273

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