Mixed valent oxide memory and method

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United States of America Patent

PATENT NO 9065047
APP PUB NO 20140248740A1
SERIAL NO

14277221

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Abstract

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Memory devices and methods of forming include a mixed valent oxide located between a first electrode and a second electrode. Implantation of a metal below a surface of one of the electrodes allows formation of the mixed valent oxide with a direct interface to the electrode. An intermetallic oxide can be subsequently formed between the mixed valent oxide and the electrode by annealing the structure.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sandhu, Gurtej S Boise, US 1217 32434

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