Compositions to facilitate room temperature growth of an oxide layer on a substrate
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United States of America Patent
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Jun 30, 2015
Grant Date -
Mar 6, 2014
app pub date -
Mar 11, 2011
filing date -
Sep 16, 2010
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Abstract
Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.
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