Atomic layer deposition apparatus and thin film forming method

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United States of America Patent

PATENT NO 9068261
APP PUB NO 20110305836A1
SERIAL NO

13203400

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.

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First Claim

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Patent Owner(s)

  • MITSUI ENGINEERING & SHIPBUILDING CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mori, Yasunari Tamano, JP 11 68
Murata, Kazutoshi Tamano, JP 11 319

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