Method of manufacturing semiconductor device, and mask
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United States of America Patent
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Jun 30, 2015
Grant Date -
Dec 5, 2013
app pub date -
May 20, 2013
filing date -
Jun 5, 2012
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Abstract
An improvement is achieved in the performance of a semiconductor device. A method of manufacturing the semiconductor device includes an exposure step of subjecting a resist film formed over a substrate to pattern exposure using EUV light reflected by the top surface of an EUV mask which is a reflection-type mask. In the exposure step, the EUV mask is held with the cleaned back surface thereof being in contact with a mask stage. In the EUV mask, the water repellency of the side surface thereof is higher than the water repellency of the top surface thereof. After the exposure step, the resist film subjected to the pattern exposure is developed to form a resist pattern.
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