Proximity mask for ion implantation with improved resistance to thermal deformation
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United States of America Patent
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Jun 30, 2015
Grant Date -
Dec 25, 2014
app pub date -
Jun 25, 2013
filing date -
Jun 25, 2013
priority date (Note) -
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Abstract
A proximity mask for ion implantation that is configured to resist thermal deformation in a direction normal to an ion beam projected on and through the mask. The mask may include a frame defining a central aperture and a plurality of ribs disposed within the aperture. The ribs may define a doping pattern and may be configured to deform in a direction normal to an ion beam projected thereon and to resist deformation in a direction orthogonal to an ion beam projected thereon upon being heated. Particularly, at least one of the ribs may include a bridge member, first and second perpendicular support legs extending perpendicularly from the bridge member, and first and second parallel support legs that extend perpendicularly from the first and second perpendicular support legs, respectively. The first and second parallel support legs may be attached to the frame.
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