Vertical memory devices and apparatuses

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9070767
APP PUB NO 20140070306A1
SERIAL NO

14079821

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Abstract

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Vertical memory devices comprise vertical transistors, buried digit lines extending in a first direction in an array region, and word lines extending in a second direction different from the first direction. Portions of the word lines in a word line end region have a first vertical length greater than a second vertical length of portions of the word lines in the array region. Apparatuses including vertical transistors in an array region, buried digit lines extending in a first direction, and word lines are also disclosed. Each of the word lines extends in a second direction perpendicular to the first direction, is formed over at least a portion of a sidewall of at least some of the vertical transistors, and vertically has a depth in a word line end region about equal to or greater than a depth thereof in the array region.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Surthi, Shyam Boise, US 78 689

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