Method, system, and device for storage cell, such as for memory

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United States of America Patent

PATENT NO 9070858
APP PUB NO 20130242649A1
SERIAL NO

13422100

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Abstract

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Embodiments disclosed herein may relate to forming an interface between a selector transistor and a phase change material storage cell in a memory device.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pirovano, Agostino Milan, IT 143 1169

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