Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
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United States of America Patent
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Jul 7, 2015
Grant Date -
Sep 4, 2008
app pub date -
Feb 29, 2008
filing date -
Mar 2, 2007
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Abstract
A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.
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