Semiconductor device comprising trench gate and buried source electrodes

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United States of America Patent

PATENT NO 9076765
APP PUB NO 20140295658A1
SERIAL NO

14305108

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Abstract

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A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends into the upper portion of the trench and is in physical and electrical contact with the first gate electrode and second gate electrode.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AUSTRIA AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blank, Oliver Freising, DE 100 437
Hiller, Uli Bad Abbach, DE 22 116

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