Memory arrays with a memory cell adjacent to a smaller size of a pillar having a greater channel length than a memory cell adjacent to a larger size of the pillar and methods

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United States of America Patent

PATENT NO 9076824
APP PUB NO 20140126290A1
SERIAL NO

13667649

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Abstract

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The disclosure is related to memory arrays and methods. One such memory array has a substantially vertical pillar. A memory cell adjacent to the pillar where the pillar has a first size has a greater channel length than a memory cell adjacent to the pillar where the pillar has a second size larger than the first size.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feeley, Peter Boise, US 159 1035
Sakui, Koji Tokyo, JP 278 4190

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