Silicided recessed silicon

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9076888
APP PUB NO 20070105357A1
SERIAL NO

11614802

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Abstract

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Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Figura, Thomas A Boise, US 77 1682
Haller, Gordon A Boise, US 83 1946
Harnish, Justin Boise, US 3 46
Iyer, Ravi Boise, US 151 3246
Meldrim, John Mark Boise, US 52 145
Nejad, Hasan Boise, US 38 691

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