Magnetic memory element

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United States of America Patent

PATENT NO 9076960
APP PUB NO 20140264669A1
SERIAL NO

14017237

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Abstract

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A magnetic memory element includes a memory layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is variable, a reference layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is not variable, and a tunnel barrier layer which is interposed between the memory layer and the reference layer. The memory layer is made of an alloy including cobalt (Co) andiron (Fe). A plurality of oxygen atoms are present on both interfaces of the memory layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aikawa, Hisanori Kanagawa, JP 48 566
Hashimoto, Yutaka Chiba, JP 70 680
Kishi, Tatsuya Kanagawa, JP 146 3816
Murayama, Akiyuki Fukuoka, JP 19 53
Nakayama, Masahiko Yamaguchi, JP 115 1775
Toko, Masaru Tokyo, JP 26 161

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