Single crystal silicon pulling device, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt

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United States of America Patent

PATENT NO 9080251
APP PUB NO 20120222613A1
SERIAL NO

13474268

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Abstract

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A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.

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Patent Owner(s)

Patent OwnerAddress
SUMCO TECHXIV CORPORATIONOMURA-SHI NAGASAKI 856-8555

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ebi, Daisuke Hiratsuka, JP 12 34
Kamogawa, Makato Hiratsuka, JP 2 2
Shimomura, Koichi Hiratsuka, JP 23 142
Suzuki, Yoshiyuki Hiratsuka, JP 145 2410

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