Etch rate modeling and use thereof for in-chamber and chamber-to-chamber matching

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United States of America Patent

PATENT NO 9082594
APP PUB NO 20150028744A1
SERIAL NO

14317360

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A method for performing chamber-to-chamber matching includes receiving a voltage and a current measured at an output of an RF generator of a first plasma system. The method further includes calculating a sum of terms. The first term is a first product of a coefficient and a function of the voltage. The second term is a second product of a coefficient and a function of the current. The third term is a third product of a coefficient, a function of the voltage, and a function of the current. The method further includes determining the sum to be the etch rate associated with the first plasma system and adjusting power output from an RF generator of a second plasma system to achieve the etch rate associated with the first plasma system.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Povolny, Henry Newark, US 16 597
Singh, Harmeet Fremont, US 163 5123
Valcore,, Jr John C Berkeley, US 89 1580

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