High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

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United States of America Patent

PATENT NO 9082689
APP PUB NO 20130292801A1
SERIAL NO

13934666

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Abstract

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A semiconductor structure is provided that includes a base substrate, and a multilayered stack located on the base substrate. The multilayered stack includes, from bottom to top, a first sacrificial material layer having a first thickness, a first semiconductor device layer, a second sacrificial material layer having a second thickness, and a second semiconductor device layer, wherein the first thickness is less than the second thickness.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Cheng-Wei White Plains, US 142 576
Li, Ning White Plains, US 707 4047
Shiu, Kuen-Ting White Plains, US 122 769

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