Use of etch process post wordline definition to improve data retention in a flash memory device
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United States of America Patent
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Jul 14, 2015
Grant Date -
Oct 10, 2013
app pub date -
Sep 22, 2011
filing date -
Sep 22, 2011
priority date (Note) -
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Abstract
Embodiments of the present disclosure are directed towards use of an etch process post wordline definition to improve data retention in a flash memory device. In one embodiment, a method includes forming a plurality of wordline structures on a substrate, wherein individual wordline structures of the plurality of wordline structures include a control gate having an electrically conductive material and a cap having an electrically insulative material formed on the control gate, depositing an electrically insulative material to form a liner on a surface of the individual wordline structures, and etching the liner to remove at least a portion of the liner. Other embodiments may be described and/or claimed.
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