Tunneling magneto-resistive sensors with buffer layers

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United States of America Patent

PATENT NO 9082958
APP PUB NO 20150097255A1
SERIAL NO

14568645

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Abstract

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In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

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Patent Owner(s)

  • SEAGATE TECHNOLOGY LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Covington, Mark Edina, US 6 48
He, Qing Plymouth, US 150 2761
Lu, Bin San Ramon, US 192 2405
Tian, Wei Eden Prairie, US 176 1285
Xu, Yunhao Fremont, US 2 40

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