Flash memory device reducing layout area

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United States of America Patent

PATENT NO 9087589
SERIAL NO

14154617

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Abstract

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A flash memory device reducing a layout area is provided. In the flash memory device, even power transistors and odd power transistors of a plurality of power connection portions corresponding to a plurality of pairs of bit lines and even select transistors and odd select transistors of a plurality of select connection portions corresponding thereto are disposed in one common active region. In the flash memory device, since the number of insulation regions/layout areas for distinguishing active regions is reduced, a layout length in the vertical direction is reduced, ultimately reducing an entire required layout area considerably.

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Patent Owner(s)

Patent OwnerAddress
DOSILICON CO LTDHONGQIAO WORLD CENTER L4A-F5 LANE 1588 ZHUGUANG ROAD XUJING TOWN QINGPU DISTRICT SHANGHAI 201799 201799

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Tae Gyoung Yongin-si, KR 6 12
Yoon, Hoon Mo Yongin-si, KR 3 6

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