Methods of forming charge storage structures including etching diffused regions to form recesses

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United States of America Patent

PATENT NO 9087737
APP PUB NO 20140349454A1
SERIAL NO

14456337

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Abstract

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Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aella, Pavan Boise, US 2 5
Khandekar, Anish Boise, US 6 16
Rana, Niraj B Boise, US 19 173
Schrinsky, Alex Boise, US 12 58

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