Method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 9087762
APP PUB NO 20150171137A1
SERIAL NO

14554311

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Abstract

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A method for manufacturing a semiconductor device is provided. The method includes forming a wiring pattern made of copper, annealing the wiring pattern in an atmosphere of inert gas, and performing plasma processing on the wiring pattern using a reducing gas after the annealing. A temperature in the plasma processing is equal to or below a temperature in the annealing.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawano, Akihiro Kawasaki, JP 64 533
Sano, Hiroaki Chofu, JP 125 6668

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