Semiconductor having a normally-on nitride semiconductor transistor and a normally-off silicon semiconductor transistor provided on different metal substrates

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United States of America Patent

PATENT NO 9087766
APP PUB NO 20140374801A1
SERIAL NO

14206032

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Abstract

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A semiconductor device according to one embodiment is provided with a first metal substrate, a second metal substrate separated from the first metal substrate, a normally-off transistor of a silicon semiconductor provided on the first metal substrate, and a normally-on transistor of a nitride semiconductor provided on the second metal substrate.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Kentaro Kanagawa, JP 69 296

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