Device and method for forming sharp extension region with controllable junction depth and lateral overlap

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9087772
APP PUB NO 20130264614A1
SERIAL NO

13611387

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Abstract

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A method for forming a semiconductor device includes forming a gate stack on a monocrystalline substrate. A surface of the substrate adjacent to the gate stack and below a portion of the gate stack is amorphorized. The surface is etched to selectively remove a thickness of amorphorized portions to form undercuts below the gate stack. A layer is epitaxially grown in the thickness and the undercuts to form an extension region for the semiconductor device. Devices are also provided.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lauer, Isaac Yorktown Heights, US 218 1825
Leobandung, Effendi Wappingers Falls, US 536 4756
Shahidi, Ghavam G Pound Ridge, US 396 8103

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