Method for manufacturing silicon-based electronics with disabling feature
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United States of America Patent
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Jul 21, 2015
Grant Date -
Nov 27, 2014
app pub date -
Jun 24, 2013
filing date -
May 22, 2013
priority date (Note) -
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Abstract
Silicon-based circuitry is dissolved or otherwise disabled in a controlled manner by reactive materials provided beneath the insulating layer on which the circuitry is formed. Heat and/or light induced acid generating materials are provided for corroding one or more circuitry components. Additionally and/or alternatively, gas-producing materials are deposited in compartments beneath the insulating layer. The gas-producing materials cause pressure to rise within the compartments, damaging the chip. Chemical reactions within the chip may be facilitated by heating elements and/or light generating elements embedded within the chip and actuated by triggering circuits.
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