Semiconductor device and manufacturing method of the same
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United States of America Patent
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Jul 21, 2015
Grant Date -
Mar 6, 2014
app pub date -
Sep 3, 2013
filing date -
Sep 6, 2012
priority date (Note) -
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Abstract
According to one embodiment, a nonvolatile semiconductor storage device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge accumulation film formed on the first insulating film, a second insulating film formed on the charge accumulation film, and a control electrode formed on a second insulating film, and one of the first and the second insulating film includes a layer containing nitrogen, a layer that is formed on the layer containing nitrogen and that includes a first oxygen containing aluminum atoms and oxygen atoms, and a layer that is formed on the layer including the first oxygen and that includes a second oxygen containing silicon atoms and oxygen atoms; and a concentration of the aluminum atoms is from 1E12 atoms/cm2 to 1E16 atoms/cm2.
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