Si and SiGeC on a buried oxide layer on a substrate

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United States of America Patent

PATENT NO 9087925
APP PUB NO 20110227130A1
SERIAL NO

13150440

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Abstract

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Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An integrated structure includes discontinuous, buried layers having alternating Si and SiGe or SiGeC regions. The structure further includes isolation structures at an interface between the Si and SiGe or SiGeC regions to reduce defects between the alternating regions. Devices are associated with the Si and SiGe or SiGeC regions.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Xuefeng South Burlington, US 142 1423
Rassel, Robert M Colchester, US 110 1046
Voldman, Steven H South Burlington, US 229 3652

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