Method and system for forming non-manhattan patterns using variable shaped beam lithography

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United States of America Patent

PATENT NO 9091946
APP PUB NO 20130306884A1
SERIAL NO

13948725

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Abstract

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A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.

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Patent Owner(s)

  • D2S, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bork, Ingo Mountain View, US 20 200
Fujimura, Akira Saratoga, US 210 2471
Jacques, Etienne Sunnyvale, US 32 623

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