Integrated passive device filter with fully on-chip ESD protection
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United States of America Patent
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Jul 28, 2015
Grant Date -
Feb 6, 2014
app pub date -
Jul 31, 2012
filing date -
Jul 31, 2012
priority date (Note) -
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Abstract
The present disclosure relates to an on-chip electrostatic discharge (ESD) protection circuit that may be reused for a variety of integrated circuit (IC) applications. Both inductor-capacitor (LC) parallel resonator and shunt inductor (connected to ground) are used as ESD protection circuits and also as a part of an impedance matching network for a given IC application. The ESD LC resonator can be designed with a variety of band pass filter (BPF) topologies. On-chip ESD protection circuit allows for co-optimization ESD and BPF performance simultaneously, a fully on-chip ESD solution for integrated passive device (IPD) processes, eliminates a need for active ESD device protection, additional processes to support off-chip ESD protection, reduces power consumption, and creates a reusable BPF topology.
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