Method for producing nitride crystal and nitride crystal
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United States of America Patent
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Aug 4, 2015
Grant Date -
May 2, 2013
app pub date -
Oct 26, 2012
filing date -
Oct 28, 2011
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Abstract
A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.
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