Insulated gate bipolar transistor
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United States of America Patent
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Aug 4, 2015
Grant Date -
May 8, 2014
app pub date -
Jan 14, 2014
filing date -
Jul 14, 2011
priority date (Note) -
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Abstract
An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a first trench gate electrode arranged lateral to the base layer and separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel exits between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrode. An enhancement layer separates the base layer from the drift layer in a plane parallel to the emitter side. A grounded gate electrode includes a second, grounded trench gate electrode and an electrically conducting layer.
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