Semiconductor memory device

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United States of America Patent

PATENT NO 9105335
APP PUB NO 20140355349A1
SERIAL NO

14460189

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Abstract

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According to one embodiment, a semiconductor memory device includes a memory cells, a selection transistor, a memory string, a block, and a transfer circuit. The memory cells are stacked on a semiconductor substrate. In the memory string, the memory cells and the selection transistor are connected in series. The block includes a plurality of memory strings. In data write and read, the transfer circuit transfers a positive voltage to a select gate line associated with a selected memory string in a selected block, and a negative voltage to a select gate line associated with an unselected memory string in the selected block, and to a select gate line associated with an unselected block.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hosono, Koji Fujisawa, JP 160 3271
Maejima, Hiroshi Tokyo, JP 234 4154

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