Nanowire PIN tunnel field effect devices

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United States of America Patent

PATENT NO 9105482
APP PUB NO 20120286242A1
SERIAL NO

13556300

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Abstract

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A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bangsaruntip, Sarunya Yorktown Heights, US 79 2526
Koester, Stephen J Yorktown Heights, US 2 26
Majumdar, Amlan Yorktown Heights, US 159 3285
Sleights, Jeffrey W Yorktown Heights, US 3 12

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