Semiconductor constructions and methods of forming electrically conductive contacts
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United States of America Patent
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Aug 11, 2015
Grant Date -
Feb 26, 2015
app pub date -
Aug 26, 2013
filing date -
Aug 26, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
Some embodiments include methods of forming electrically conductive contacts. An opening is formed through an insulative material to a conductive structure. A conductive plug is formed within a bottom region of the opening. A spacer is formed to line a lateral periphery of an upper region of the opening, and to leave an inner portion of an upper surface of the plug exposed. A conductive material is formed against the inner portion of the upper surface of the plug. Some embodiments include semiconductor constructions having a conductive plug within an insulative stack and against a copper-containing material. A spacer is over an outer portion of an upper surface of the plug and not directly above an inner portion of the upper surface. A conductive material is over the inner portion of the upper surface of the plug and against an inner lateral surface of the spacer.
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