Semiconductor device and method of manufacturing the same
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United States of America Patent
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Aug 11, 2015
Grant Date -
Sep 19, 2013
app pub date -
Sep 14, 2012
filing date -
Dec 21, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a multilayered interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface portion of the element isolation insulating film, a second region along a sidewall portion of the charge storage layer, and a third region above an upper surface portion of the charge storage layer. The interelectrode insulating film includes a stack of first silicon oxide film, a silicon nitride film, and a second silicon oxide film. The silicon nitride film is relatively thicker in the third region compared to the first region and compared to at least a portion of the second region.
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