Nonvolatile variable resistive device

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United States of America Patent

PATENT NO 9105838
APP PUB NO 20120211719A1
SERIAL NO

13228753

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Abstract

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According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haimoto, Takashi Kanagawa, JP 6 87
Ichihara, Reika Kanagawa, JP 75 744
Kusai, Haruka Kanagawa, JP 13 648

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