Method of forming film, method of forming pattern, and method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 9108342
APP PUB NO 20130078817A1
SERIAL NO

13414754

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Abstract

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According to an embodiment, a method of forming a film is provided. In the method of forming a film, a reversed pattern which is the reverse of a desired layout pattern is formed on a first substrate. Subsequently, a pattern material of the desired layout pattern is supplied to a second substrate as a reversal material. Thereafter, the reversed pattern is brought into contact with the reversal material such that the reversed pattern faces the reversal material, so that the reversed pattern is filled with the reversal material by a capillary phenomenon.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Azuma, Tsukasa Kanagawa, JP 37 407

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