Concentric phase change memory element

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United States of America Patent

PATENT NO 9111609
APP PUB NO 20120134204A1
SERIAL NO

13364727

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Abstract

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The present invention in one embodiment provides a memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase change material and a cladding of a second phase change material, wherein the first phase change material has a lower crystallization temperature than the second phase change material. The present invention also provides methods of forming the above described memory device.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION;SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Happ, Thomas D Dresdan, DE 15 713
Schrott, Alejandro G New York, US 98 1720

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