R-T-B based permanent magnet

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United States of America Patent

PATENT NO 9111674
APP PUB NO 20140320243A1
SERIAL NO

14257206

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing R-T-B based permanent magnet. In the R-T-B based structure, a stack structure of R1-T-B based crystallizing layer and (Y,Ce)-T-B based crystallizing layer can be formed by alternatively stacking R1-T-B and (Y,Ce)-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystallizing layer can be maintained while an improved temperature coefficient of the (Y,Ce)-T-B based crystallizing layer can be obtained. Further, a high coercivity can be obtained by adding the Ce-T-B based crystallizing layer with a low lattice distortion to the Y-T-B based crystallizing layer.

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Patent Owner(s)

  • TDK CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Kyung-Ku Tokyo, JP 29 131
Hashimoto, Ryuji Tokyo, JP 64 350
Suzuki, Kenichi Tokyo, JP 397 3613

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