Forming three dimensional isolation structures
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United States of America Patent
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Aug 18, 2015
Grant Date -
Apr 2, 2015
app pub date -
Dec 11, 2014
filing date -
Nov 23, 2010
priority date (Note) -
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Abstract
A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
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