Memory with carbon-containing silicon channel

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United States of America Patent

PATENT NO 9111798
APP PUB NO 20140339572A1
SERIAL NO

14447884

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Abstract

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A memory includes a first memory cell and a second memory cell formed over the first memory cell. Each of the first memory cell and the second memory cell includes a channel region comprising silicon and carbon, a control gate, and a dielectric stack between the channel region and the control gate. A carbon content of the channel region of the second memory cell is less than a carbon content of the channel region of the first memory cell.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mouli, Chandra Boise, US 291 3851

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