Method for manufacturing semiconductor memory device and semiconductor memory device
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United States of America Patent
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Aug 18, 2015
Grant Date -
Sep 25, 2014
app pub date -
Aug 20, 2013
filing date -
Mar 25, 2013
priority date (Note) -
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Abstract
According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a plurality of pillars and a plurality of sidewall films on a stacked body including a plurality of electrode layers stacked alternately with a plurality of insulating layers. The pillars are arranged in a first direction and a second direction intersecting the first direction at different pitches in the first direction and the second direction. The sidewall films are provided on outer circumferential surfaces of the pillars to extend in the first direction to be linked in the first direction and separated in the second direction. The method includes making a slit to divide the stacked body in the second direction by etching the stacked body under a region between the sidewall films adjacent to each other in the second direction using the pillars and the sidewall films as a mask.
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