Nonvolatile semiconductor memory device and method for manufacturing same
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United States of America Patent
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Aug 18, 2015
Grant Date -
Sep 25, 2014
app pub date -
Sep 6, 2013
filing date -
Mar 19, 2013
priority date (Note) -
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Abstract
According one embodiment, a nonvolatile semiconductor memory device, includes: a stacked body, and each of a plurality of electrode layers and each of a plurality of insulating layers being stacked alternately in the a stacked body; a first interlayer insulating film on the stacked body; a gate electrode on the first interlayer insulating film; a second interlayer insulating film on the gate electrode; a semiconductor layer extended from an upper end of the second interlayer insulating film to a lower end of the stacked body; a first insulating film between the semiconductor layer and each of the plurality of electrode layers; and a second insulating film between the semiconductor layer and the gate electrode, a thickness of the semiconductor layer provided above an upper end of the gate electrode being thicker than a thickness of the semiconductor layer provided below the upper end of the gate electrode.
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