Semiconductor device and method of manufacturing the same
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United States of America Patent
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Aug 18, 2015
Grant Date -
May 22, 2014
app pub date -
Nov 19, 2013
filing date -
Nov 21, 2012
priority date (Note) -
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Abstract
A semiconductor device according to an embodiment includes: first and second semiconductor regions each having a protruded shape provided on a substrate, the first semiconductor region including a first source, a first drain, and a first channel provided between the first source and the first drain and extending in a first direction from the first source to the first drain, the first channel having a first width in a second direction perpendicular to the first direction, and the second semiconductor region including a second source, a second drain, and a second channel provided between the second source and the second drain and extending in a third direction from the second source to the second drain, the second channel having a second width in a fourth direction perpendicular to the third direction that is wider than the first width of the first channel.
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