Bonding wire for semiconductor device
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United States of America Patent
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Aug 18, 2015
Grant Date -
May 3, 2012
app pub date -
Jan 12, 2012
filing date -
Jul 24, 2007
priority date (Note) -
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status (Latency Note)
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Abstract
It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
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